Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Main Authors: Cho, Byung Jin, Kim, Sun Jung, Ling, C.H., Joo, Moon Sig, Yeo, In Seok
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72877
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-728772024-11-14T01:24:42Z Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions Cho, Byung Jin Kim, Sun Jung Ling, C.H. Joo, Moon Sig Yeo, In Seok ELECTRICAL ENGINEERING Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 30-33 00234 2014-06-19T05:12:59Z 2014-06-19T05:12:59Z 1999 Conference Paper Cho, Byung Jin,Kim, Sun Jung,Ling, C.H.,Joo, Moon Sig,Yeo, In Seok (1999). Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 30-33. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/72877 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Cho, Byung Jin
Kim, Sun Jung
Ling, C.H.
Joo, Moon Sig
Yeo, In Seok
format Conference or Workshop Item
author Cho, Byung Jin
Kim, Sun Jung
Ling, C.H.
Joo, Moon Sig
Yeo, In Seok
spellingShingle Cho, Byung Jin
Kim, Sun Jung
Ling, C.H.
Joo, Moon Sig
Yeo, In Seok
Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions
author_sort Cho, Byung Jin
title Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions
title_short Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions
title_full Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions
title_fullStr Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions
title_full_unstemmed Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions
title_sort radiation-induced leakage current of ultra-thin gate oxide under x-ray lithography conditions
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/72877
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