Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
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sg-nus-scholar.10635-728772024-11-14T01:24:42Z Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions Cho, Byung Jin Kim, Sun Jung Ling, C.H. Joo, Moon Sig Yeo, In Seok ELECTRICAL ENGINEERING Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 30-33 00234 2014-06-19T05:12:59Z 2014-06-19T05:12:59Z 1999 Conference Paper Cho, Byung Jin,Kim, Sun Jung,Ling, C.H.,Joo, Moon Sig,Yeo, In Seok (1999). Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 30-33. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/72877 NOT_IN_WOS Scopus |
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Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Cho, Byung Jin Kim, Sun Jung Ling, C.H. Joo, Moon Sig Yeo, In Seok |
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Conference or Workshop Item |
author |
Cho, Byung Jin Kim, Sun Jung Ling, C.H. Joo, Moon Sig Yeo, In Seok |
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Cho, Byung Jin Kim, Sun Jung Ling, C.H. Joo, Moon Sig Yeo, In Seok Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions |
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Cho, Byung Jin |
title |
Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions |
title_short |
Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions |
title_full |
Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions |
title_fullStr |
Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions |
title_full_unstemmed |
Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions |
title_sort |
radiation-induced leakage current of ultra-thin gate oxide under x-ray lithography conditions |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/72877 |
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1821195392488833024 |