Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditions
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Saved in:
Main Authors: | Cho, Byung Jin, Kim, Sun Jung, Ling, C.H., Joo, Moon Sig, Yeo, In Seok |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/72877 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation
by: Cho, B.J., et al.
Published: (2014) -
Comparative study of radiation- and stress-induced leakage currents in thin gate oxides
by: Ang, C.H., et al.
Published: (2014) -
Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias
by: Ang, Chew-Hoe, et al.
Published: (2014) -
Reliability of thin gate oxides irradiated under X-ray lithography conditions
by: Cho, B.J., et al.
Published: (2014) -
Stress-induced leakage current in ultra-thin gate oxide
by: Ang, Kheng Guan
Published: (2008)