Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique

Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Guan, Hao, Cho, Byung Jin, Li, M.F., He, Y.D., Xu, Zhen, Dong, Zhong
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72949
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Institution: National University of Singapore
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Summary:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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