Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Main Authors:	Guan, Hao, Cho, Byung Jin, Li, M.F., He, Y.D., Xu, Zhen, Dong, Zhong
Other Authors:	ELECTRICAL ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/72949
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-72949
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spelling	sg-nus-scholar.10635-729492015-01-26T06:02:13Z Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique Guan, Hao Cho, Byung Jin Li, M.F. He, Y.D. Xu, Zhen Dong, Zhong ELECTRICAL ENGINEERING Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 81-84 00234 2014-06-19T05:13:49Z 2014-06-19T05:13:49Z 1999 Conference Paper Guan, Hao,Cho, Byung Jin,Li, M.F.,He, Y.D.,Xu, Zhen,Dong, Zhong (1999). Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 81-84. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/72949 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Guan, Hao Cho, Byung Jin Li, M.F. He, Y.D. Xu, Zhen Dong, Zhong
format	Conference or Workshop Item
author	Guan, Hao Cho, Byung Jin Li, M.F. He, Y.D. Xu, Zhen Dong, Zhong
spellingShingle	Guan, Hao Cho, Byung Jin Li, M.F. He, Y.D. Xu, Zhen Dong, Zhong Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique
author_sort	Guan, Hao
title	Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique
title_short	Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique
title_full	Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique
title_fullStr	Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique
title_full_unstemmed	Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique
title_sort	study of quasi-breakdown mechanism in ultra-thin gate oxide by using dciv technique
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/72949
_version_	1681087658738057216

Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique

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