Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique

• Main Authors: Guan, Hao, Cho, Byung Jin, Li, M.F., He, Y.D., Xu, Zhen, Dong, Zhong
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/72949
• Institution: National University of Singapore

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA