Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

10.1016/j.tsf.2005.09.167

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書目詳細資料
Main Authors:	Chan, H.Y., Srinivasan, M.P., Benistant, F., Mok, K.R., Chan, L., Jin, H.M.
其他作者:	CHEMICAL & BIOMOLECULAR ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
主題:	Diffusion-limited kinetics Ostwald ripening Transient enhanced diffusion
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/74522
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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