A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs

Solid State Electronics

Saved in:

Bibliographic Details
Main Authors:	Leang, S.E., Chim, W.K., Chan, D.S.H.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80277
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-80277
record_format	dspace
spelling	sg-nus-scholar.10635-802772015-01-06T15:20:48Z A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs Leang, S.E. Chim, W.K. Chan, D.S.H. ELECTRICAL ENGINEERING Solid State Electronics 38 10 1791-1798 SSELA 2014-10-07T02:55:45Z 2014-10-07T02:55:45Z 1995-10 Article Leang, S.E.,Chim, W.K.,Chan, D.S.H. (1995-10). A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs. Solid State Electronics 38 (10) : 1791-1798. ScholarBank@NUS Repository. 00381101 http://scholarbank.nus.edu.sg/handle/10635/80277 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Solid State Electronics
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Leang, S.E. Chim, W.K. Chan, D.S.H.
format	Article
author	Leang, S.E. Chim, W.K. Chan, D.S.H.
spellingShingle	Leang, S.E. Chim, W.K. Chan, D.S.H. A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
author_sort	Leang, S.E.
title	A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
title_short	A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
title_full	A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
title_fullStr	A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
title_full_unstemmed	A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
title_sort	new gate current measurement technique for the characterization of hot-carrier induced degradation in mosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80277
_version_	1681088857167101952

A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs

Similar Items