A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
Solid State Electronics
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Main Authors: | Leang, S.E., Chim, W.K., Chan, D.S.H. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80277 |
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Institution: | National University of Singapore |
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