A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs

A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs

Solid State Electronics

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Bibliographic Details
Main Authors: Leang, S.E., Chim, W.K., Chan, D.S.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80277
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Institution: National University of Singapore
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