A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's

A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's

10.1109/55.650342

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Bibliographic Details
Main Authors: Ang, D.S., Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Charge pumping current
Gate-to-drain capacitance
Hot-carrier degradation
Lateral profilig of trapped charges
MOSFET's
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80281
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Institution: National University of Singapore
Description
Summary:10.1109/55.650342

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