A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's

10.1109/55.650342

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Bibliographic Details
Main Authors:	Ang, D.S., Ling, C.H.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Charge pumping current Gate-to-drain capacitance Hot-carrier degradation Lateral profilig of trapped charges MOSFET's
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80281
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80281
record_format	dspace
spelling	sg-nus-scholar.10635-802812023-10-25T23:06:13Z A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's Ang, D.S. Ling, C.H. ELECTRICAL ENGINEERING BACHELOR OF TECHNOLOGY PROGRAMME Charge pumping current Gate-to-drain capacitance Hot-carrier degradation Lateral profilig of trapped charges MOSFET's 10.1109/55.650342 IEEE Electron Device Letters 19 1 23-25 EDLED 2014-10-07T02:55:48Z 2014-10-07T02:55:48Z 1998-01 Article Ang, D.S., Ling, C.H. (1998-01). A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's. IEEE Electron Device Letters 19 (1) : 23-25. ScholarBank@NUS Repository. https://doi.org/10.1109/55.650342 07413106 http://scholarbank.nus.edu.sg/handle/10635/80281 000071161800008 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Charge pumping current Gate-to-drain capacitance Hot-carrier degradation Lateral profilig of trapped charges MOSFET's
spellingShingle	Charge pumping current Gate-to-drain capacitance Hot-carrier degradation Lateral profilig of trapped charges MOSFET's Ang, D.S. Ling, C.H. A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
description	10.1109/55.650342
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ang, D.S. Ling, C.H.
format	Article
author	Ang, D.S. Ling, C.H.
author_sort	Ang, D.S.
title	A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
title_short	A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
title_full	A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
title_fullStr	A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
title_full_unstemmed	A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
title_sort	novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded n-mosfet's
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80281
_version_	1781783896111710208

A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's

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