A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
10.1109/55.650342
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80281 |
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| Institution: | National University of Singapore |