Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate

Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate

Journal of Applied Physics

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Bibliographic Details
Main Authors: Lau, W.S., Khaw, K.K., Qian, P.W., Sandler, N.P., Chu, P.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80346
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Institution: National University of Singapore
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Summary:Journal of Applied Physics

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