Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate

Journal of Applied Physics

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Main Authors:	Lau, W.S., Khaw, K.K., Qian, P.W., Sandler, N.P., Chu, P.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80346
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80346
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spelling	sg-nus-scholar.10635-803462015-01-16T08:06:55Z Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate Lau, W.S. Khaw, K.K. Qian, P.W. Sandler, N.P. Chu, P.K. ELECTRICAL ENGINEERING Journal of Applied Physics 79 11 8841-8843 JAPIA 2014-10-07T02:56:31Z 2014-10-07T02:56:31Z 1996-06-01 Article Lau, W.S.,Khaw, K.K.,Qian, P.W.,Sandler, N.P.,Chu, P.K. (1996-06-01). Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate. Journal of Applied Physics 79 (11) : 8841-8843. ScholarBank@NUS Repository. 00218979 http://scholarbank.nus.edu.sg/handle/10635/80346 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Journal of Applied Physics
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Lau, W.S. Khaw, K.K. Qian, P.W. Sandler, N.P. Chu, P.K.
format	Article
author	Lau, W.S. Khaw, K.K. Qian, P.W. Sandler, N.P. Chu, P.K.
spellingShingle	Lau, W.S. Khaw, K.K. Qian, P.W. Sandler, N.P. Chu, P.K. Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate
author_sort	Lau, W.S.
title	Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate
title_short	Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate
title_full	Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate
title_fullStr	Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate
title_full_unstemmed	Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate
title_sort	defect states responsible for leakage current in ta2o5 films on si due to si contamination from the substrate
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80346
_version_	1681088870542737408

Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate

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