Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate

Journal of Applied Physics

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Bibliographic Details
Main Authors:	Lau, W.S., Khaw, K.K., Qian, P.W., Sandler, N.P., Chu, P.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80346
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Institution:	National University of Singapore

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