Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors:	Chong, P.F., Cho, B.J., Chor, E.F., Joo, M.S., Yeo, I.S.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Electron-beam irradiation Electron-beam lithography Interface states Quasi-breakdown Radiation induced leakage current Stress induced leakage current
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80635
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Institution:	National University of Singapore

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Summary:	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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