Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

• Main Authors: Chong, P.F., Cho, B.J., Chor, E.F., Joo, M.S., Yeo, I.S.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Electron-beam irradiation; Electron-beam lithography; Interface states; Quasi-breakdown; Radiation induced leakage current; Stress induced leakage current
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80635
• Institution: National University of Singapore

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers