Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors:	Chong, P.F., Cho, B.J., Chor, E.F., Joo, M.S., Yeo, I.S.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Electron-beam irradiation Electron-beam lithography Interface states Quasi-breakdown Radiation induced leakage current Stress induced leakage current
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80635
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80635
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spelling	sg-nus-scholar.10635-806352015-01-09T14:15:35Z Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions Chong, P.F. Cho, B.J. Chor, E.F. Joo, M.S. Yeo, I.S. ELECTRICAL ENGINEERING Electron-beam irradiation Electron-beam lithography Interface states Quasi-breakdown Radiation induced leakage current Stress induced leakage current Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 39 4 B 2181-2185 JAPLD 2014-10-07T02:59:40Z 2014-10-07T02:59:40Z 2000 Article Chong, P.F.,Cho, B.J.,Chor, E.F.,Joo, M.S.,Yeo, I.S. (2000). Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 39 (4 B) : 2181-2185. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/80635 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	Electron-beam irradiation Electron-beam lithography Interface states Quasi-breakdown Radiation induced leakage current Stress induced leakage current
spellingShingle	Electron-beam irradiation Electron-beam lithography Interface states Quasi-breakdown Radiation induced leakage current Stress induced leakage current Chong, P.F. Cho, B.J. Chor, E.F. Joo, M.S. Yeo, I.S. Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions
description	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Chong, P.F. Cho, B.J. Chor, E.F. Joo, M.S. Yeo, I.S.
format	Article
author	Chong, P.F. Cho, B.J. Chor, E.F. Joo, M.S. Yeo, I.S.
author_sort	Chong, P.F.
title	Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions
title_short	Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions
title_full	Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions
title_fullStr	Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions
title_full_unstemmed	Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions
title_sort	investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80635
_version_	1681088924277014528

Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions

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