Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation

Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation

Applied Physics Letters

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Bibliographic Details
Main Authors: Cha, C.-L., Chor, E.-F., Gong, H., Bourdillon, A.J., Jia, Y.-M., Pan, J.-S., Zhang, A.-Q., Chan, L.
Other Authors: MATERIALS SCIENCE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81235
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Institution: National University of Singapore
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Summary:Applied Physics Letters

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