Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation

Applied Physics Letters

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Bibliographic Details
Main Authors: Cha, C.-L., Chor, E.-F., Gong, H., Bourdillon, A.J., Jia, Y.-M., Pan, J.-S., Zhang, A.-Q., Chan, L.
Other Authors: MATERIALS SCIENCE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81235
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Institution: National University of Singapore

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