Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation
Applied Physics Letters
Saved in:
Main Authors: | Cha, C.-L., Chor, E.-F., Gong, H., Bourdillon, A.J., Jia, Y.-M., Pan, J.-S., Zhang, A.-Q., Chan, L. |
---|---|
Other Authors: | MATERIALS SCIENCE |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81235 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown
by: Cha, C.L., et al.
Published: (2014) -
Multi-layer high-κ interpoly dielectric for floating gate flash memory devices
by: Zhang, L., et al.
Published: (2014) -
A novel floating gate engineering technique for improved data retention of flash memory devices
by: Pu, J., et al.
Published: (2014) -
P-Type floating gate for retention and P/E window improvement of flash memory devices
by: Shen, C., et al.
Published: (2014) -
Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory
by: Pu, J., et al.
Published: (2014)