Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures
10.1103/PhysRevB.47.13868
Saved in:
Main Authors: | Tan, L.S., Chua, S.J., Arora, V.K. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81347 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures
by: Tan, L.S., et al.
Published: (2014) -
Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1-xAs quantum wells
by: Li, G., et al.
Published: (2014) -
Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge
by: Chia, C.K., et al.
Published: (2014) -
Acceptor-related radiative recombination of quasi-two-dimensional electrons in modulation-doped GaAs/AlxGa1-xAs heterojunctions
by: Chua, S.J., et al.
Published: (2014) -
Carrier concentration saturation in n type AlxGa1-xAs
by: Du, A.Y., et al.
Published: (2014)