A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications

A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications

10.1109/TED.2006.888669

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Bibliographic Details
Main Authors: Yu, X., Yu, M., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Charge trapping
Gate leakage current
High-Κ gate dielectric
Interface-state density Dit
Metal gate
Mobility
MOSFETs
Thermal stability
Vth instability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81846
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2006.888669

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