A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications

10.1109/TED.2006.888669

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Bibliographic Details
Main Authors:	Yu, X., Yu, M., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Charge trapping Gate leakage current High-Κ gate dielectric Interface-state density Dit Metal gate Mobility MOSFETs Thermal stability Vth instability
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81846
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81846
record_format	dspace
spelling	sg-nus-scholar.10635-818462023-10-29T22:27:22Z A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications Yu, X. Yu, M. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING Charge trapping Gate leakage current High-Κ gate dielectric Interface-state density Dit Metal gate Mobility MOSFETs Thermal stability Vth instability 10.1109/TED.2006.888669 IEEE Transactions on Electron Devices 54 2 284-290 IETDA 2014-10-07T04:22:23Z 2014-10-07T04:22:23Z 2007-02 Article Yu, X., Yu, M., Zhu, C. (2007-02). A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications. IEEE Transactions on Electron Devices 54 (2) : 284-290. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.888669 00189383 http://scholarbank.nus.edu.sg/handle/10635/81846 000243888100015 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Charge trapping Gate leakage current High-Κ gate dielectric Interface-state density Dit Metal gate Mobility MOSFETs Thermal stability Vth instability
spellingShingle	Charge trapping Gate leakage current High-Κ gate dielectric Interface-state density Dit Metal gate Mobility MOSFETs Thermal stability Vth instability Yu, X. Yu, M. Zhu, C. A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications
description	10.1109/TED.2006.888669
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, X. Yu, M. Zhu, C.
format	Article
author	Yu, X. Yu, M. Zhu, C.
author_sort	Yu, X.
title	A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications
title_short	A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications
title_full	A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications
title_fullStr	A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications
title_full_unstemmed	A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications
title_sort	comparative study of hftaon/sio2 and hfon/sio2 gate stacks with tan metal gate for advanced cmos applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81846
_version_	1781783997125230592

A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications

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