A comparative study of HfTaON/SiO2 and HfON/SiO2 gate stacks with TaN metal gate for advanced CMOS applications

• Main Authors: Yu, X., Yu, M., Zhu, C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Charge trapping; Gate leakage current; High-Κ gate dielectric; Interface-state density Dit; Metal gate; Mobility; MOSFETs; Thermal stability; Vth instability
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81846
• Institution: National University of Singapore

10.1109/TED.2006.888669