Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions

10.1016/j.sse.2007.09.013

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Bibliographic Details
Main Authors:	Ang, K.-W., Chin, H.-C., Chui, K.-J., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Ballistic efficiency Carrier backscattering Injection velocity Strain
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82028
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82028
record_format	dspace
spelling	sg-nus-scholar.10635-820282023-10-26T22:06:47Z Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions Ang, K.-W. Chin, H.-C. Chui, K.-J. Li, M.-F. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Ballistic efficiency Carrier backscattering Injection velocity Strain 10.1016/j.sse.2007.09.013 Solid-State Electronics 51 11-12 1444-1449 SSELA 2014-10-07T04:24:33Z 2014-10-07T04:24:33Z 2007-11 Article Ang, K.-W., Chin, H.-C., Chui, K.-J., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-11). Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions. Solid-State Electronics 51 (11-12) : 1444-1449. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2007.09.013 00381101 http://scholarbank.nus.edu.sg/handle/10635/82028 000251831200005 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Ballistic efficiency Carrier backscattering Injection velocity Strain
spellingShingle	Ballistic efficiency Carrier backscattering Injection velocity Strain Ang, K.-W. Chin, H.-C. Chui, K.-J. Li, M.-F. Samudra, G.S. Yeo, Y.-C. Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
description	10.1016/j.sse.2007.09.013
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Chin, H.-C. Chui, K.-J. Li, M.-F. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Ang, K.-W. Chin, H.-C. Chui, K.-J. Li, M.-F. Samudra, G.S. Yeo, Y.-C.
author_sort	Ang, K.-W.
title	Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
title_short	Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
title_full	Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
title_fullStr	Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
title_full_unstemmed	Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
title_sort	carrier backscattering characteristics of strained silicon-on-insulator n-mosfets featuring silicon-carbon source/drain regions
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82028
_version_	1781784044642500608

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions

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