Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions

10.1016/j.sse.2007.09.013

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Bibliographic Details
Main Authors: Ang, K.-W., Chin, H.-C., Chui, K.-J., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ballistic efficiency
Carrier backscattering
Injection velocity
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82028
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Institution: National University of Singapore
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