Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation

Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation

10.1109/TED.2007.892358

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Bibliographic Details
Main Authors: Wu, N., Zhang, Q., Balasubramanian, N., Chan, D.S.H., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Bias temperature instability (BTI)
Charge trapping
Germanium
HfO2
High-κ gate dielectrics
MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82037
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2007.892358

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