Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation

• Main Authors: Wu, N., Zhang, Q., Balasubramanian, N., Chan, D.S.H., Zhu, C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Bias temperature instability (BTI); Charge trapping; Germanium; HfO2; High-κ gate dielectrics; MOSFET
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82037
• Institution: National University of Singapore

10.1109/TED.2007.892358