Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation

Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation

10.1109/TED.2007.892358

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Bibliographic Details
Main Authors: Wu, N., Zhang, Q., Balasubramanian, N., Chan, D.S.H., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Bias temperature instability (BTI)
Charge trapping
Germanium
HfO2
High-κ gate dielectrics
MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82037
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-820372023-10-26T09:02:40Z Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation Wu, N. Zhang, Q. Balasubramanian, N. Chan, D.S.H. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING Bias temperature instability (BTI) Charge trapping Germanium HfO2 High-κ gate dielectrics MOSFET 10.1109/TED.2007.892358 IEEE Transactions on Electron Devices 54 4 733-741 IETDA 2014-10-07T04:24:39Z 2014-10-07T04:24:39Z 2007-04 Article Wu, N., Zhang, Q., Balasubramanian, N., Chan, D.S.H., Zhu, C. (2007-04). Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation. IEEE Transactions on Electron Devices 54 (4) : 733-741. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.892358 00189383 http://scholarbank.nus.edu.sg/handle/10635/82037 000245327900016 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Bias temperature instability (BTI)
Charge trapping
Germanium
HfO2
High-κ gate dielectrics
MOSFET
spellingShingle Bias temperature instability (BTI)
Charge trapping
Germanium
HfO2
High-κ gate dielectrics
MOSFET
Wu, N.
Zhang, Q.
Balasubramanian, N.
Chan, D.S.H.
Zhu, C.
Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation
description 10.1109/TED.2007.892358
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Wu, N.
Zhang, Q.
Balasubramanian, N.
Chan, D.S.H.
Zhu, C.
format Article
author Wu, N.
Zhang, Q.
Balasubramanian, N.
Chan, D.S.H.
Zhu, C.
author_sort Wu, N.
title Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation
title_short Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation
title_full Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation
title_fullStr Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation
title_full_unstemmed Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation
title_sort characteristics of self-aligned gate-first ge p- and n-channel mosfets using cvd hfo2 gate dielectric and si surface passivation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82037
_version_ 1781784046524694528

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