Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs

10.1109/TPEL.2013.2288644

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Bibliographic Details
Main Authors: Huang, H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
AlGaN/GaN high-electron mobility transistor (HEMT)
current collapse
field plate design
GaN device modeling
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82228
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Institution: National University of Singapore
Description
Summary:10.1109/TPEL.2013.2288644

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