Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs

10.1109/TPEL.2013.2288644

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Bibliographic Details
Main Authors: Huang, H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
AlGaN/GaN high-electron mobility transistor (HEMT)
current collapse
field plate design
GaN device modeling
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82228
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Institution: National University of Singapore
id sg-nus-scholar.10635-82228
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spelling sg-nus-scholar.10635-822282024-11-11T08:21:03Z Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs Huang, H. Liang, Y.C. Samudra, G.S. Chang, T.-F. Huang, C.-F. ELECTRICAL & COMPUTER ENGINEERING AlGaN/GaN high-electron mobility transistor (HEMT) current collapse field plate design GaN device modeling 10.1109/TPEL.2013.2288644 IEEE Transactions on Power Electronics 29 5 2164-2173 ITPEE 2014-10-07T04:26:54Z 2014-10-07T04:26:54Z 2014-05 Article Huang, H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F. (2014-05). Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs. IEEE Transactions on Power Electronics 29 (5) : 2164-2173. ScholarBank@NUS Repository. https://doi.org/10.1109/TPEL.2013.2288644 08858993 http://scholarbank.nus.edu.sg/handle/10635/82228 000329991500003 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic AlGaN/GaN high-electron mobility transistor (HEMT)
current collapse
field plate design
GaN device modeling
spellingShingle AlGaN/GaN high-electron mobility transistor (HEMT)
current collapse
field plate design
GaN device modeling
Huang, H.
Liang, Y.C.
Samudra, G.S.
Chang, T.-F.
Huang, C.-F.
Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
description 10.1109/TPEL.2013.2288644
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Huang, H.
Liang, Y.C.
Samudra, G.S.
Chang, T.-F.
Huang, C.-F.
format Article
author Huang, H.
Liang, Y.C.
Samudra, G.S.
Chang, T.-F.
Huang, C.-F.
author_sort Huang, H.
title Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
title_short Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
title_full Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
title_fullStr Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
title_full_unstemmed Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
title_sort effects of gate field plates on the surface state related current collapse in algan/gan hemts
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82228
_version_ 1821209699918282752

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