Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs

• Main Authors: Huang, H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: AlGaN/GaN high-electron mobility transistor (HEMT); current collapse; field plate design; GaN device modeling
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82228
• Institution: National University of Singapore

10.1109/TPEL.2013.2288644