Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs

10.1109/TPEL.2013.2288644

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書目詳細資料
Main Authors:	Huang, H., Liang, Y.C., Samudra, G.S., Chang, T.-F., Huang, C.-F.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	AlGaN/GaN high-electron mobility transistor (HEMT) current collapse field plate design GaN device modeling
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82228
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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