Electronic and vibronic properties of n-type GaN: The influence of etching and annealing
10.1088/0953-8984/14/17/317
Saved in:
Main Authors: | Tripathy, S., Chua, S.J., Ramam, A. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82264 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing
by: Tripathy, S., et al.
Published: (2014) -
Etching of GaN using Inductively Coupled Plasma
by: Ramam, A., et al.
Published: (2014) -
Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry
by: Tripathy, S., et al.
Published: (2014) -
Exposure of defects in GaN by plasma etching
by: Choi, H.W., et al.
Published: (2014) -
High optical quality nanoporous GaN prepared by photoelectrochemical etching
by: Vajpeyi, A.P., et al.
Published: (2014)