Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching

Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching

10.1116/1.1586283

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Bibliographic Details
Main Authors: Chen, J., Tan, K.M., Wu, N., Yoo, W.J., Chan, D.S.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82377
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Institution: National University of Singapore
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Summary:10.1116/1.1586283

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