Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching

10.1116/1.1586283

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Main Authors:	Chen, J., Tan, K.M., Wu, N., Yoo, W.J., Chan, D.S.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82377
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-823772023-10-30T22:31:57Z Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching Chen, J. Tan, K.M. Wu, N. Yoo, W.J. Chan, D.S.H. ELECTRICAL & COMPUTER ENGINEERING 10.1116/1.1586283 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 21 4 1210-1217 JVTAD 2014-10-07T04:28:39Z 2014-10-07T04:28:39Z 2003-07 Article Chen, J., Tan, K.M., Wu, N., Yoo, W.J., Chan, D.S.H. (2003-07). Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 21 (4) : 1210-1217. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1586283 07342101 http://scholarbank.nus.edu.sg/handle/10635/82377 000184409200063 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1116/1.1586283
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chen, J. Tan, K.M. Wu, N. Yoo, W.J. Chan, D.S.H.
format	Article
author	Chen, J. Tan, K.M. Wu, N. Yoo, W.J. Chan, D.S.H.
spellingShingle	Chen, J. Tan, K.M. Wu, N. Yoo, W.J. Chan, D.S.H. Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching
author_sort	Chen, J.
title	Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching
title_short	Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching
title_full	Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching
title_fullStr	Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching
title_full_unstemmed	Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching
title_sort	formation of polycrystalline silicon germanium/hfo2 gate stack structure using inductively coupled plasma etching
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82377
_version_	1781784122224541696

Formation of polycrystalline silicon germanium/HfO2 gate stack structure using inductively coupled plasma etching

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