I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering

I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering

10.1109/LED.2006.886708

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Impact ionization
Impact-ionization MOS (I-MOS)
Silicon-germanium
Subthreshold swing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82494
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2006.886708

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