I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering

10.1109/LED.2006.886708

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Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Impact ionization Impact-ionization MOS (I-MOS) Silicon-germanium Subthreshold swing
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82494
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Institution:	National University of Singapore

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