I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering

10.1109/LED.2006.886708

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Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Impact ionization Impact-ionization MOS (I-MOS) Silicon-germanium Subthreshold swing
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82494
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82494
record_format	dspace
spelling	sg-nus-scholar.10635-824942023-10-26T21:46:52Z I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Impact ionization Impact-ionization MOS (I-MOS) Silicon-germanium Subthreshold swing 10.1109/LED.2006.886708 IEEE Electron Device Letters 27 12 975-977 EDLED 2014-10-07T04:30:03Z 2014-10-07T04:30:03Z 2006-12 Article Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C. (2006-12). I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering. IEEE Electron Device Letters 27 (12) : 975-977. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.886708 07413106 http://scholarbank.nus.edu.sg/handle/10635/82494 000242606000010 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Impact ionization Impact-ionization MOS (I-MOS) Silicon-germanium Subthreshold swing
spellingShingle	Impact ionization Impact-ionization MOS (I-MOS) Silicon-germanium Subthreshold swing Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Samudra, G. Yeo, Y.-C. I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering
description	10.1109/LED.2006.886708
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
format	Article
author	Toh, E.-H. Wang, G.H. Chan, L. Lo, G.-Q. Samudra, G. Yeo, Y.-C.
author_sort	Toh, E.-H.
title	I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering
title_short	I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering
title_full	I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering
title_fullStr	I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering
title_full_unstemmed	I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering
title_sort	i-mos transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82494
_version_	1781784154558431232

I-MOS transistor with an elevated silicon-germanium impact-ionization region for bandgap engineering

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