Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process

10.1109/LED.2005.845496

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Main Authors:	Kang, F.J., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Yeo, Y.-C., Sa, N., Yang, H., Liu, X.Y., Han, R.Q., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	HfO2 gate dielectric Instability of Vth Mobility nMOS transistor Sub-1-nm equivalent oxide thickness (EOT)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82504
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82504
record_format	dspace
spelling	sg-nus-scholar.10635-825042023-10-26T20:32:21Z Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process Kang, F.J. Yu, H.Y. Ren, C. Wang, X.P. Li, M.-F. Chan, D.S.H. Yeo, Y.-C. Sa, N. Yang, H. Liu, X.Y. Han, R.Q. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING HfO2 gate dielectric Instability of Vth Mobility nMOS transistor Sub-1-nm equivalent oxide thickness (EOT) 10.1109/LED.2005.845496 IEEE Electron Device Letters 26 4 237-239 EDLED 2014-10-07T04:30:10Z 2014-10-07T04:30:10Z 2005-04 Article Kang, F.J., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Yeo, Y.-C., Sa, N., Yang, H., Liu, X.Y., Han, R.Q., Kwong, D.-L. (2005-04). Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process. IEEE Electron Device Letters 26 (4) : 237-239. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.845496 07413106 http://scholarbank.nus.edu.sg/handle/10635/82504 000227870600005 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	HfO2 gate dielectric Instability of Vth Mobility nMOS transistor Sub-1-nm equivalent oxide thickness (EOT)
spellingShingle	HfO2 gate dielectric Instability of Vth Mobility nMOS transistor Sub-1-nm equivalent oxide thickness (EOT) Kang, F.J. Yu, H.Y. Ren, C. Wang, X.P. Li, M.-F. Chan, D.S.H. Yeo, Y.-C. Sa, N. Yang, H. Liu, X.Y. Han, R.Q. Kwong, D.-L. Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
description	10.1109/LED.2005.845496
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Kang, F.J. Yu, H.Y. Ren, C. Wang, X.P. Li, M.-F. Chan, D.S.H. Yeo, Y.-C. Sa, N. Yang, H. Liu, X.Y. Han, R.Q. Kwong, D.-L.
format	Article
author	Kang, F.J. Yu, H.Y. Ren, C. Wang, X.P. Li, M.-F. Chan, D.S.H. Yeo, Y.-C. Sa, N. Yang, H. Liu, X.Y. Han, R.Q. Kwong, D.-L.
author_sort	Kang, F.J.
title	Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
title_short	Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
title_full	Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
title_fullStr	Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
title_full_unstemmed	Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process
title_sort	improved electrical and reliability characteristics of hfn-hfo2-gated nmosfet with 0.95-nm eot fabricated using a gate-first process
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82504
_version_	1781784157737713664

Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process

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