Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process

• Main Authors: Kang, F.J., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Yeo, Y.-C., Sa, N., Yang, H., Liu, X.Y., Han, R.Q., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: HfO2 gate dielectric; Instability of Vth; Mobility; nMOS transistor; Sub-1-nm equivalent oxide thickness (EOT)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82504
• Institution: National University of Singapore

10.1109/LED.2005.845496