Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon

Influence of RuOx Gate Thermal Annealing on Electrical Characteristics of AlxGa1-xN/GaN HEMTs on 200-mm Silicon

10.1149/2.008402ssl

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Bibliographic Details
Main Authors:	Kyaw, L.M., Dolmanan, S.B., Bera, M.K., Liu, Y., Tan, H.R., Bhat, T.N., Dikme, Y., Chor, E.F., Tripathy, S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82537
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Institution:	National University of Singapore

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