Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications

10.1109/LED.2003.820649

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Bibliographic Details
Main Authors:	Yu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	HfN HfO 2 High-K gate dielectrics Metal gate electrode MOS devices
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82988
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82988
record_format	dspace
spelling	sg-nus-scholar.10635-829882023-10-30T07:10:42Z Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications Yu, H.Y. Kang, J.F. Ren, C. Chen, J.D. Hou, Y.T. Shen, C. Li, M.F. Chan, D.S.H. Bera, K.L. Tung, C.H. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING HfN HfO 2 High-K gate dielectrics Metal gate electrode MOS devices 10.1109/LED.2003.820649 IEEE Electron Device Letters 25 2 70-72 EDLED 2014-10-07T04:35:54Z 2014-10-07T04:35:54Z 2004-02 Article Yu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L. (2004-02). Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications. IEEE Electron Device Letters 25 (2) : 70-72. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.820649 07413106 http://scholarbank.nus.edu.sg/handle/10635/82988 000188807300008 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	HfN HfO 2 High-K gate dielectrics Metal gate electrode MOS devices
spellingShingle	HfN HfO 2 High-K gate dielectrics Metal gate electrode MOS devices Yu, H.Y. Kang, J.F. Ren, C. Chen, J.D. Hou, Y.T. Shen, C. Li, M.F. Chan, D.S.H. Bera, K.L. Tung, C.H. Kwong, D.-L. Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
description	10.1109/LED.2003.820649
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yu, H.Y. Kang, J.F. Ren, C. Chen, J.D. Hou, Y.T. Shen, C. Li, M.F. Chan, D.S.H. Bera, K.L. Tung, C.H. Kwong, D.-L.
format	Article
author	Yu, H.Y. Kang, J.F. Ren, C. Chen, J.D. Hou, Y.T. Shen, C. Li, M.F. Chan, D.S.H. Bera, K.L. Tung, C.H. Kwong, D.-L.
author_sort	Yu, H.Y.
title	Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
title_short	Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
title_full	Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
title_fullStr	Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
title_full_unstemmed	Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
title_sort	robust high-quality hfn-hfo 2 gate stack for advanced mos device applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82988
_version_	1781784268930809856

Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications

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