Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications

Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications

10.1109/LED.2003.820649

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Bibliographic Details
Main Authors: Yu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
HfN
HfO 2
High-K gate dielectrics
Metal gate electrode
MOS devices
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82988
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Institution: National University of Singapore

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