Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors

10.1109/LED.2007.910779

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Main Authors:	Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	FinFET Multiple-gate transistor (MuGFET) Silicon-carbon Spacerless Strain Stress
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83041
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83041
record_format	dspace
spelling	sg-nus-scholar.10635-830412024-11-11T18:20:09Z Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Hoe, K.-M. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING FinFET Multiple-gate transistor (MuGFET) Silicon-carbon Spacerless Strain Stress 10.1109/LED.2007.910779 IEEE Electron Device Letters 29 1 80-82 EDLED 2014-10-07T04:36:34Z 2014-10-07T04:36:34Z 2008-01 Article Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2008-01). Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors. IEEE Electron Device Letters 29 (1) : 80-82. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.910779 07413106 http://scholarbank.nus.edu.sg/handle/10635/83041 000252098100024 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	FinFET Multiple-gate transistor (MuGFET) Silicon-carbon Spacerless Strain Stress
spellingShingle	FinFET Multiple-gate transistor (MuGFET) Silicon-carbon Spacerless Strain Stress Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Hoe, K.-M. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
description	10.1109/LED.2007.910779
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Hoe, K.-M. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
format	Article
author	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Hoe, K.-M. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
author_sort	Liow, T.-Y.
title	Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
title_short	Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
title_full	Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
title_fullStr	Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
title_full_unstemmed	Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
title_sort	spacer removal technique for boosting strain in n-channel finfets with silicon-carbon source and drain stressors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83041
_version_	1821212540236988416

Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors

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