Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors

Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors

10.1109/LED.2007.910779

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Bibliographic Details
Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
FinFET
Multiple-gate transistor (MuGFET)
Silicon-carbon
Spacerless
Strain
Stress
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83041
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Institution: National University of Singapore

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