Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors

• Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Hoe, K.-M., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: FinFET; Multiple-gate transistor (MuGFET); Silicon-carbon; Spacerless; Strain; Stress
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83041

10.1109/LED.2007.910779