Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

10.1109/VTSA.2011.5872215

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Bibliographic Details
Main Authors: Liu, B., Yang, M., Zhan, C., Yang, Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83512
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Institution: National University of Singapore
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Summary:10.1109/VTSA.2011.5872215

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