Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

10.1109/VTSA.2011.5872215

Saved in:

Bibliographic Details
Main Authors:	Liu, B., Yang, M., Zhan, C., Yang, Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83512
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-83512
record_format	dspace
spelling	sg-nus-scholar.10635-835122015-01-14T10:01:31Z Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors Liu, B. Yang, M. Zhan, C. Yang, Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VTSA.2011.5872215 International Symposium on VLSI Technology, Systems, and Applications, Proceedings 22-23 2014-10-07T04:42:04Z 2014-10-07T04:42:04Z 2011 Conference Paper Liu, B.,Yang, M.,Zhan, C.,Yang, Y.,Yeo, Y.-C. (2011). Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 22-23. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VTSA.2011.5872215" target="_blank">https://doi.org/10.1109/VTSA.2011.5872215</a> 9781424484928 http://scholarbank.nus.edu.sg/handle/10635/83512 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VTSA.2011.5872215
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, B. Yang, M. Zhan, C. Yang, Y. Yeo, Y.-C.
format	Conference or Workshop Item
author	Liu, B. Yang, M. Zhan, C. Yang, Y. Yeo, Y.-C.
spellingShingle	Liu, B. Yang, M. Zhan, C. Yang, Y. Yeo, Y.-C. Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
author_sort	Liu, B.
title	Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
title_short	Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
title_full	Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
title_fullStr	Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
title_full_unstemmed	Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
title_sort	bias temperature instability (bti) characteristics of graphene field-effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83512
_version_	1681089449596813312

Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

Similar Items