CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

10.1016/j.sse.2012.05.030

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Bibliographic Details
Main Authors:	Ivana, Kong, E.Y.-J., Subramanian, S., Zhou, Q., Pan, J., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Subjects:	Cobalt Contact metallization InGaAs Self-aligned
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83555
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83555
record_format	dspace
spelling	sg-nus-scholar.10635-835552023-10-30T07:22:05Z CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs Ivana Kong, E.Y.-J. Subramanian, S. Zhou, Q. Pan, J. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Cobalt Contact metallization InGaAs Self-aligned 10.1016/j.sse.2012.05.030 Solid-State Electronics 78 62-67 SSELA 2014-10-07T04:42:32Z 2014-10-07T04:42:32Z 2012-12 Conference Paper Ivana, Kong, E.Y.-J., Subramanian, S., Zhou, Q., Pan, J., Yeo, Y.-C. (2012-12). CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs. Solid-State Electronics 78 : 62-67. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2012.05.030 00381101 http://scholarbank.nus.edu.sg/handle/10635/83555 000309313600012 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Cobalt Contact metallization InGaAs Self-aligned
spellingShingle	Cobalt Contact metallization InGaAs Self-aligned Ivana Kong, E.Y.-J. Subramanian, S. Zhou, Q. Pan, J. Yeo, Y.-C. CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
description	10.1016/j.sse.2012.05.030
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ivana Kong, E.Y.-J. Subramanian, S. Zhou, Q. Pan, J. Yeo, Y.-C.
format	Conference or Workshop Item
author	Ivana Kong, E.Y.-J. Subramanian, S. Zhou, Q. Pan, J. Yeo, Y.-C.
author_sort	Ivana
title	CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
title_short	CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
title_full	CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
title_fullStr	CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
title_full_unstemmed	CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
title_sort	coingaas as a novel self-aligned metallic source/drain material for implant-less in 0.53ga 0.47as n-mosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83555
_version_	1781784366938062848

CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs

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